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Electrical Characteristics

The electrical characteristics of CI13082V are shown in the following table.

Table E-1 Electrical Characteristics

Symbol Description Min Typ Max Unit
VDD33 3.3V Power Supply 3.0 3.3 3.6 V
VDD11 1.1V Power Supply 0.99 1.1 1.21 V
VIH Input High Voltage
(3.0V ≤ VDD33 ≤ 3.6V)
0.7*VDD33 - VDD33+0.3 V
VIL Input Low Voltage
(3.0V ≤ VDD33 ≤ 3.6V)
-0.3 - 0.3*VDD33 V
VOL Output Low Voltage @IOL = 12mA - - 0.4 V
VOH Output High Voltage @IOH = 20mA 2.4 - - V
I5V-IO Drive Current of 5V-tolerant I/O @ 3.3V Output 20 - 33 mA
I3V3-IO Drive Current of 3.3V I/O @ 3.3V Output 14 - 24 mA
ΣIVDD Total Current of All I/Os - - 90 mA
Pde Total Power Consumption @ 3.3V Supply (VDD11 = 1.1V External, TA = 25°C) 40 - 90 mW
Pdi Total Power Consumption @ 3.3V Input (Internal LDO, TA = 25°C) 99 - 175 mW
RC Oscillator
Accuracy Note5
TA = -40 to 85°C -1.5 - +1.5 %
Top Operating Temperature Range -40 - +85 °C
Tst Storage Temperature Range -55 - +150 °C

Note4: Ripple must be less than 100mVp-p.
Note5: Due to semiconductor technology principles and characteristics, the built-in RC oscillator’s frequency accuracy may experience temperature drift (±1.5%) in high/low temperature environments. The CI13082V features built-in baud rate adaptation circuitry to maintain normal communication with the MCU across temperature variations. For applications requiring highly accurate clocking, please use our chip models with external crystal oscillators and their corresponding application solutions.