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Electrical Characteristics

The electrical characteristics of CI2324X are shown in the following tables.

Table E-1 Electrical Characteristics

Symbol	Description	Min	Typ	Max	Unit
VIN5V	Chip Power Supply Input (Note6)	3.6	5	5.5	V
AVDD	3.3V Power Supply	2.97	3.3	3.63	V
VDD11	1.1V Power Supply	0.99	1.1	1.21	V
VIH	Input High Voltage (3.0V ≤ VDD33 ≤ 3.6V)	0.7*VDD33	-	VDD33+0.3	V
VIL	Input Low Voltage (3.0V ≤ VDD33 ≤ 3.6V)	-0.3	-	0.3*VDD33	V
VOL	Output Low Voltage @IOL = 12mA	-	-	0.4	V
VOH	Output High Voltage @IOH = 20mA	2.4	-	-	V
I5V-IO	Drive Current of 5V-tolerant I/O @3.3V Output	20	-	33	mA
I3V3-IO	Drive Current of 3.3V I/O @3.3V Output	14	-	24	mA
ΣIVDD	Total Current of All I/Os	-	-	260	mA
Pde	Total Power Consumption @5V Supply with External 1.1V VDD11, Normal Operation (TA = 25°C)	80	-	140	mW
Pdi	Total Power Consumption @5V Supply with Internal LDO, Normal Operation (TA = 25°C)	160	-	310	mW
RC Oscillator Accuracy (Note7)	TA = -40 to 85°C	-1.5	-	+1.5	%
Top	Operating Temperature	-40	-	+85	°C
Tst	Storage Temperature	-55	-	+150	°C

Note6: Ripple should be less than 300mVp-p.
Note7: Due to semiconductor technology principles and characteristics, the built-in RC oscillator may experience frequency drift (±1.5%) in high/low temperature environments. The CI2324X features built-in baud rate adaptation circuitry to ensure normal communication with the MCU across temperature variations. If your application requires highly accurate clocking, please use our chips with external crystal oscillators and corresponding application solutions.

Table E-2 RF Characteristics

Parameter	Symbol	Description	Min	Typ	Max	Unit
Sleep Power	I_SLEEP	VDDRF=3.3V	-	6	-	μA
Current in TX 0dBm	I_TX	VDDRF=3.3V	-	2.5	-	mA
Current in RX 1Mbps BLE	I_RX	VDDRF=3.3V @ -98 dBm sensitivity	-	2.8	-	mA
Frequency Range	Freq	-	2400	-	2483.5	MHz
Output Power	Pout	-	-20	-	5	dBm

Above power consumption data is measured with VDDRF = 3.3V