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Electrical Characteristics

The electrical characteristics of CI1316XP are shown in the following table.

Table E-1 Electrical Characteristics

Symbol Description Min Typ Max Unit
VIN5V Chip power supply input Note1 3.6 5 5.5 V
AVDD 3.3V power supply 2.97 3.3 3.63 V
VDD11 1.1V power supply 0.99 1.1 1.21 V
VIH Input high voltage
(3.0V ≤ VDD33 ≤ 3.6V)
0.7*VDD33 - VDD33+0.3 V
VIL Input low voltage
(3.0V ≤ VDD33 ≤ 3.6V)
-0.3 - 0.3*VDD33 V
VOL Output low voltage @IOL = 12mA - - 0.4 V
VOH Output high voltage @IOH = 20mA 2.4 - - V
I5V-IO Drive current of 5V tolerant I/O at 3.3V output 20 - 33 mA
I3V3-IO Drive current of 3.3V I/O at 3.3V output 14 - 24 mA
ΣIVDD Total current of all I/Os - - 200 mA
Pde Total power consumption at 5V supply with external 1.1V VDD11 during normal recognition (TA = 25°C) 60 - 110 mW
Pdi Total power consumption at 5V supply with internal LDO during normal recognition (TA = 25°C) 145 - 275 mW
Pa Total power consumption at 5V supply with internal LDO during normal playback (TA = 25°C) 1.375 - 2.675 W
RC Oscillator
Accuracy Note5
TA = -40 to 85°C -1.5 - +1.5 %
Top Operating temperature range -40 - +85 °C
Tst Storage temperature range -55 - +150 °C

Note4: Ripple should be less than 300mVp-p.
Note5: Due to semiconductor technology principles and characteristics, the built-in RC oscillator’s frequency accuracy may drift (±1.5%) in high/low temperature environments. CI1316XP features built-in baud rate adaptation circuitry to ensure normal communication with the MCU in various temperature conditions. If your application requires highly accurate clocking, please use our chips with external crystal oscillators and corresponding application solutions.

Parameter Symbol Test Condition Min Typ Max Unit
Output Power 8Ω Po THD+N<1%, f=1KHz - 1.1 - W
Output Power 8Ω Po THD+N<1%, f=1KHz - 1.1 - W
Output Power 4Ω Po THD+N<1%, f=1KHz - 1.6 - W
Output Power 4Ω Po THD+N<10%, f=1KHz - - 2.4 W
THD+N THD+N PO=0.5Wrms; f=1KHz - 0.1 0.2 %
PSRR PSRR Vripple=200mVPP, sine wave, 10Ω input 60 - - dB